polishing behaviors of ceria abrasives on silicon dioxide

polishing behaviors of ceria abrasives on silicon dioxide and ...

Polishing behaviors of ceria abrasives on silicon dioxide and ...

The effects of ceria (CeO 2) abrasives in chemical mechanical polishing (CMP) slurries were investigated on silicon dioxide (SiO 2) and silicon nitride (Si 3 N 4) polishing process. The ceria abrasives were prepared by the flux method, using potassium hydroxide (KOH) as the grain growth accelerator.

Get Price
polishing behaviors of single crystalline ceria abrasives on ...

Polishing behaviors of single crystalline ceria abrasives on ...

Considering these polishing behaviors of single crystalline ceria abrasives, it was found that there exists an optimum abrasive size for optimum removal rate and selectivity in silicon dioxide and silicon nitride CMP.

Get Price
polishing behaviors of ceria abrasives on silicon dioxide and ...

Polishing behaviors of ceria abrasives on silicon dioxide and ...

The effects of ceria (CeO2) abrasives in chemical mechanical polishing (CMP) slurries were investigated on silicon dioxide (SiO2) and silicon nitride (Si3N4) polishing process.

Get Price
polishing behaviors of single crystalline ceria abrasives on ...

Polishing behaviors of single crystalline ceria abrasives on ...

Polishing behaviors of single crystalline ceria abrasives on silicon dioxide and silicon nitride CMP Article in Microelectronic Engineering 87(12):2633-2637 · December 2010 with 28 Reads

Get Price
polishing behaviors of single crystalline ceria abrasives on ...

Polishing behaviors of single crystalline ceria abrasives on ...

The effects of single crystalline ceria (CeO 2) abrasives in chemical mechanical polishing (CMP) slurries were investigated for silicon dioxide (SiO 2) and silicon nitride (Si 3 N 4) CMP process. The size of ceria abrasives was controlled by varying hydrothermal reaction conditions.

Get Price
polishing behaviors of ceria abrasives on silicon dioxide and ...

Polishing behaviors of ceria abrasives on silicon dioxide and ...

The effects of ceria (CeO₂) abrasives in chemical mechanical polishing (CMP) slurries were investigated on silicon dioxide (SiO₂) and silicon nitride (Si₃N₄) polishing process. The ceria abrasives were prepared by the flux method, using potassium hydroxide (KOH) as the grain growth accelerator.

Get Price
abrasive effects in oxide chemical mechanical polishing | mrs ...

Abrasive Effects in Oxide Chemical Mechanical Polishing | MRS ...

Oh, Myoung-Hwan Singh, Rajiv K. Gupta, Sushant and Cho, Seung-Beom 2010. Polishing behaviors of single crystalline ceria abrasives on silicon dioxide and silicon nitride CMP. Microelectronic Engineering, Vol. 87, Issue. 12, p. 2633. CrossRef; Google Scholar

Get Price
selective chemical mechanical polishing of silicon dioxide ...

Selective Chemical Mechanical Polishing of Silicon Dioxide ...

Removal of blanket silicon dioxide and silicon nitride films at pH 4 using 0.25% ceria (~60 nm) + 0.05% pyridine HCl as a function of polishing time. The contact angles of silicon dioxide and silicon nitride wafers dipped, for 1 min in 0.05 wt % pyridine HCl aqueous solution, stirred at 1000 rpm at pH 4, were ~57 ± 4 and 62 ± 2 ...

Get Price